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| FMW20N60S1HF Datasheet, PDF (4/7 Pages) Fuji Electric – N-Channel enhancement mode power MOSFET | |||
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FMW20N60S1HF
Drain-Source On-state Resistance
RDS(on)= f(Tch): ID=10A, VGS=10V
0.6
FUJI POWER MOSFET
http://www.fujielectric.com/products/semiconductor/
Gate Threshold Voltage vs. Tch
VGS(th)= f(Tch): VDS=VGS, ID=250µA
6
0.5
5
0.4
4
0.3
max.
0.2
typ.
0.1
3
typ.
2
1
0.0
-50 -25 0
25 50 75
Tch [°C]
100 125 150
Typical Transfer Characteristic
ID= f(VGS): 80µs pulse test, VDS=25V
100
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Transconductance
gfs= f(ID): 80µs pulse test, VDS=25V
100
10
1
150â Tch=25â
0.1
0.01
Tch=25â
10
150â
1
1E-3
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Forward Characteristics of Reverse Diode
IF= f(VSD): 80µs pulse test
100
0.1
0.1
105
104
103
10
150â
Tch=25â
102
101
1
100
0.1
10-1
0.0
0.5
1.0
1.5
2.0
10-2
VSD [V]
4
1
10
100
ID [A]
Typical Capacitance
C= f(VDS): VGS=0V, f=1MHz
Ciss
Coss
Crss
10-1
100
101
102
VDS [V]
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