FGW75N60HD Datasheet, PDF (4/8 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 600V / 75A

FGW75N60HD
Graph.7
Typical Capacitance
VGE=0V, f=1MHz, Tj=25^ºC
10⁴
Cies
10³
Coes
Cres
10²
10¹
10^-2
10^-1
10⁰
10¹
VCE [V]
Graph.9
Typical switching time vs. IC
Tj=175^ºC, VCC=400V, L=500µH
VGE=15V,RG=10Ω
g
j
1000
td(off)
100
tf
tr
10
td(on)
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
VCC=400V, IC=75A, Tj=25^ºC
20
15
VCC=400V
10
5
0B
0
100
200
300
400
500
600
QG [nC]
Graph.10
Typical switching time vs. RG
Tj=175^ºC, VCC=400V, IC=75A, L=500µH
VGE=15V
1000
100
td(off)
tf
10
tr
td(on)
1
0
20
40
60
80
100
120
140
Collector Current IC [A]
Graph.11
Typical switching losses vs. IC
Tj=175^ºC, VCC=400V, L=500µH
VGE=15V, RG=10Ω
,
,g ,j
12
10
8
Eoff
Eon
6
4
2
0
0
20
40
60
80
100
120
140
Collector Current IC [A]
4
1
0
10
20
30
40
50
60
Gate Resistor RG [Ω]
Graph.12
Typical switching losses vs. RG
Tj=175^ºC, VCC=400V, IC=75A, L=500µH
VGE=15V
j
12
10
Eoff
8
Eon
6
4
2
0
0
10
20
30
40
50
60
Gate Resistor RG [Ω]