6MBI100VB-120-50 Datasheet, PDF (4/6 Pages) Fuji Electric – IGBT MODULE (V series) 1200V / 100A / 6 in one package

6MBI100VB-120-50
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 125°C
10000
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[ Inverter ]
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj= 150°C
10000
1000
toff
ton
tr
100
tf
10
0
50
100
150
200
250
Collector current: I_C [A]
[ Inverter ]
Switching time vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V, Tj= 125°C
10000
toff
1000
ton
tr
100
tf
10
0.1
1.0
10.0
Gate resistance : RG [Ω]
100.0
[ Inverter ]
Switching loss vs. gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V
30
20
10
0
0
Eon(150°C)
Eon(125°C)
Eoff(150°C)
Eoff(125°C)
Err(150°C)
Err(125°C)
1
10
100
Gate resistance : RG [Ω]
4
1000
toff
ton
tr
100
tf
10
0
50
100
150
200
250
Collector current: I_C [A]
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω
30
Eon(150°C)
Eon(125°C)
20
Eoff(150°C)
Eoff(125°C)
Err(150°C)
10
Err(125°C)
0
0
50
100
150
200
250
Collector current: I_C [A]
[ Inverter ]
Reverse bias safe operating area (max.)
+VGE=15V,-VGE <= 15V, RG >= 1.6Ω ,Tj <= 125°C
250
200
150
RBSOA
(Repetitive pulse)
100
50
0
0 200 400 600 800 1000 1200 1400 1600
Collector-Emitter voltage : V_CE [V]