2MBI800UG-170 Datasheet, PDF (4/13 Pages) Fuji Electric – IGBT MODULE

3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified )
Items
Symbols
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic
Continuous
Collector current
Icp
1ms
-Ic
-Ic pulse 1ms
Collector Power Dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base *1
Viso
AC : 1min.
Mounting
Screw Torque *2
Main Terminals
Sense Terminals
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 4.25~5.75 Nm (M6)
Main Terminals 8~10 Nm (M8)
Sense Terminals 1.8~2.1 Nm (M4)
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Maximum
Ratings
1700
±20
1130
800
2260
1600
800
1600
3900
150
-40 ~ +125
Units
V
V
A
W
°C
3400
VAC
5.75
10
Nm
2.1
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
ICES
VGE = 0V
VCE = 1700V
Gate-Emitter
leakage current
IGES
VCE = 0V
VGE=±20V
Gate-Emitter
threshold voltage
VGE(th)
VCE = 20V
Ic = 800mA
Collector-Emitter
saturation voltage
VCE(sat)
(main terminal)
VGE=15V
VCE(sat)
(sense terminal)
Ic = 800A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz
ton
Vcc = 900V
Turn-on
tr
Ic = 800A
VGE=±15V,Tj=125℃
Turn-off
toff
Rgon = 1.0 Ω
tf
Rgoff = 1.8 Ω
Forward on voltage
VF
(main terminal)
VGE=0V
VF
(sense terminal)
IF = 800A
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
Reverse recovery
trr
IF = 800A
Lead resistance, terminal-chip *
R lead
(*) _{Biggest internal terminal resistance among arm.}
Characteristics
min.
typ.
max.
-
-
1.0
Units
mA
-
-
1600 nA
5.5
6.5
7.5
V
-
2.25
2.55
-
-
2.60
2.05
-
2.35
V
-
2.40
-
-
80
-
nF
-
1.30
-
-
0.75
-
µs
-
1.50
-
-
0.40
-
-
2.00
2.35
-
-
2.20
1.80
-
2.15
V
-
2.00
-
-
0.45
-
µs
-
0.25
-
mΩ
MS5F5924
4
13
H04-004-03a