2MBI200U4H-120 Datasheet, PDF (4/13 Pages) Fuji Electric – IGBT MODULE

3. Absolute Maximum Ratings ( at Tc= 25^oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Collector-Emitter voltage
Gate-Emitter voltage
VCES
VGES
Ic
Continuous
Collector current
Icp
1ms
-Ic
-Ic pulse
1ms
Collector Power Dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base (*1)
Viso
AC : 1min.
Screw Mounting (*2)
Torque Terminals (*3)
-
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5 to 3.5 Nm (M5 or M6)
(*3) Recommendable Value : Terminals 3.5 to 4.5 Nm (M6)
Tc=25^oC
Tc=80^oC
Tc=25^oC
Tc=80^oC
Max i m u m
Ratings
1200
±20
300
200
600
400
200
400
1040
+150
-40 to +125
Units
V
V
A
W
o_C
2500
VAC
3.5
4.5
Nm
4. Electrical characteristics ( at Tj= 25^oC unless otherwise specified )
It em s
Sym b o l s
Conditions
Characteristics
min.
typ.
m ax .
Zero gate voltage
collector current
ICES
VCE=1200V
VGE=0V
-
-
2.0
Gate-Emitter
leakage current
IGES
VCE=0V
VGE=±20V
-
-
400
Gate-Emitter
threshold voltage
VGE(th)
VCE=20V
Ic=200mA
4.5
6.5
8.5
VCE(sat) Ic=200A
Tj=25^oC
-
a _2.10 a _2.25
Collector-Emitter
(terminal) VGE=15V
Tj=125^oC
-
a _2.30
-
saturation voltage
VCE(sat)
Tj=25^oC
-
1.90
2.05
(chip)
Tj=125^oC
-
2.10
-
Input capacitance
Cies
VCE=10V,VGE=0V,f=1MHz -
22
-
ton
Vcc=600V
-
0.32
1.20
Turn-on time
tr
Ic=200A
-
0.10
0.60
tr(i)
VGE=±15V
-
0.03
-
Turn-off time
toff
RG=3.0Ω
tf
-
0.41
1.00
-
0.07
0.30
VF
IF=200A
Tj=25^oC
-
1.80
1.95
Forward on voltage
(terminal)
VF
VGE=0V
Tj=125^oC
-
Tj=25^oC
-
1.90
-
1.65
1.80
(chip)
Tj=125^oC
-
1.75
-
Reverse recovery time
trr
IF=200A
-
-
0.35
Lead resistance,
terminal-chip (*4)
R lead
-
0.53
-
(*4) Biggest internal terminal resistance among arm.
Units
mA
nA
V
V
nF
us
V
us
mΩ
MS5F6035
4
a
13
H04-004-03a