2MBI200U2A-060 Datasheet, PDF (4/13 Pages) Fuji Electric – IGBT module

3.Absolute Maximum Ratings ( at Tc= 25℃ unless otherwise specified ）
Items
Symbols
Conditions
Collector-Emitter voltage
VCES
Gate-Emitter voltage
VGES
Ic
Continuous
Collector current
Icp
1mS
-Ic
-Ic pulse
Collector Power Dissipation
Pc
1 device
Junction temperature
Tj
Storage temperature
Tstg
Isolation
voltage
between terminal and copper base *1
Viso
AC : 1min.
Screw Torque
Mounting *2
Terminals *2
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
Terminals 2.5~3.5 Nm (M5)
Maximum
Ratings
600
±20
200
400
200
400
660
150
-40～ +125
Units
V
V
A
W
℃
2500
VAC
3.5
3.5
N・m
4. Electrical characteristics ( at Tj= 25℃ unless otherwise specified)
Items
Symbols
Conditions
Zero gate voltage
Collector current
ICES
VGE = 0V
VCE = 600V
Gate-Emitter
leakage current
IGES
VCE = 0V
VGE=±20V
Gate-Emitter
threshold voltage
VGE(th)
VCE = 20V
Ic = 200mA
Collector-Emitter
saturation voltage
VCE(sat)
(terminal)
VCE(sat)
(chip)
VGE=15V
Ic = 200A
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
Input capacitance
Cies VCE=10V,VGE=0V,f=1MHz
ton
Vcc = 300V
Turn-on time
tr
Ic = 200A
tr (i) VGE=±15V
Turn-off time
toff
Rg = 16 Ω
tf
Forward on voltage
VF
(terminal)
VF
(chip)
VGE=0V
IF = 200A
Tj= 25℃
Tj=125℃
Tj= 25℃
Tj=125℃
Reverse recovery time
ｔｒｒ
IF = 200A
Lead resistance, terminal-chip *
R lead
(*) _{Biggest internal terminal resistance among arm.}
Characteristics
min.
typ.
max.
-
-
1.0
Units
mA
-
-
200
nA
6.2
6.7
7.7
V
-
2.15
2.45
-
-
a _2.4
1.85
-
-
V
-
a _2.1
-
-
14.0
-
nF
-
0.40
1.20
-
0.22
0.60
-
0.16
-
µs
-
0.48
1.20
-
0.07
0.45
-
a _1.90
a _2.30
-
-
a _1.95
a _1.60
-
-
V
-
a _1.65
-
-
-
0.35
µs
-
1.39
-
mΩ
MS5F 5616
a
4
13
H04-004-03a