1MBK30D-060S Datasheet, PDF (4/5 Pages) Fuji Electric – Molded IGBT

1MBK30D-060S
Characteristics
Switching time vs. RG
VCC=300V, IC=30A, VGE=+15V, Tj=125°C
IGBT Module
Switching time vs. RG
VCC=300V, IC=30A, VGE=±15V, Tj=125°C
Gate resistance : RG (Ω)
Dynamic input characteristics
Tj=25°C
Gate resistance : RG (Ω)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Gate charge : Qg (nc)
Reverse Biased Safe Operating Area
RG=10Ω, +VGE_=<20V, -VGE=15V, Tj=<125°C
Collector-Emitter Voltage : VCE (V)
Forward Bias Safe Operating Area
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage : VCE (V)