1MBI75U4F-120L-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE (U series) 1200V / 75A / 1 in one package

1MBI75U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω,Tj=125^oC
1000
100
toff
ton
tr
tf
1000
100
ton
toff
tr
tf
10
0
50
100
150
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=25^oC
10000
ton
1000
toff
tr
100
tf
10
1
10
100
Gate resistance : RG [ Ω ]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=75A, VGE=±15V, Tj=125^oC
40
10
0
50
100
150
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=9.1Ω
14
Eon(125^oC)
12
Eon(25^oC)
10
Eoff(125^oC)
8
Err(125^oC)
Eoff(25^oC)
6
Err(25^oC)
4
2
0
0
25
50
75 100 125 150
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 9.1Ω, Tj <= 125^oC
200
30
20
10
0
1
Eon
Eoff
Err
10
100
Gate resistance : RG [ Ω ]
1000
4
150
100
50
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]