1MBI50U4F-120L-50 Datasheet, PDF (4/7 Pages) Fuji Electric – IGBT MODULE (U series) 1200V / 50A / 1 in one package

1MBI50U4F-120L-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=22Ω, Tj=25^oC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=22Ω, Tj=125^oC
1000
100
toff
ton
tr
tf
1000
100
ton
toff
tr
tf
10
0
25
50
75
100
Collector current : Ic [ A ]
10000
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj=25^oC
ton
1000
toff
tr
100
10
10
tf
100
Gate resistance : RG [Ω]
1000
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=50A, VGE=±15V, Tj=125^oC
20
Eon
10
0
10
Eoff
Err
100
Gate resistance : RG [Ω]
1000
4
10
0
25
50
75
100
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=22Ω
10
Eon(125^oC)
8
Eoff(125^oC)
Eon(25^oC)
6
Err(125^oC)
Eoff(25^oC)
4
Err(25^oC)
2
0
0
25
50
75
100
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 22Ω, Tj <= 125^oC
125
100
75
50
25
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]