1MBH50-060 Datasheet, PDF (4/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
120
+ V _GE=15V, -V _GE< 15V, T_j< 125°C, R_G> 6.2Ω
100
80
60
40
20
0
0 100 200 300 400 500 600 700
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
120
T _j=125°C 25°C
100
80
60
40
20
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5
Forward Voltage : V_F [V]
600
500
400
300
200
100
0
5
Typical Short Circuit Capability
V _CC= 4 0 0 V , R _G=6.2 Ω , T_j=125°C
60
t_SC
I_SC
50
40
30
20
10
0
10
15
20
25
Gate Voltage : V_GE [V]
500
400
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=50A, T _j=125°C
25
I _rr
20
300
15
200
100
10
t_rr
5
0
0
0
100
200
300
400
500
-di_{/dt [A/µsec]}
Transient Thermal Resistance
10⁰
10 ^-1
IGBT
10 ^-2
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
Pulse Width : P_W [sec]
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