1MBH15D-120 Datasheet, PDF (4/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V _GE<15V, T_j< 125°C, R_G> 12Ω
35
30
25
20
15
10
5
0
0 200 400 600 800 1000 1200 1400
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
60
50
T_j=125°C 25°C
40
30
20
10
0
0
1
2
3
4
Forward Voltage : V_F [V]
Typical Short Circuit Capability
V _CC= 8 0 0 V , R _G= 1 2Ω , T_j=125°C
250
50
t_SC
200
150
40
I_SC
30
100
20
50
10
0
0
5
10
15
20
25
Gate Voltage : V_GE [V]
500
400
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=15A, T _j=125°C
25
I _rr
20
300
15
200
10
100
0
0
5
t _rr
100
200 300 400
-di_{/dt [A/µsec]}
500
0
600
Transient Thermal Resistance
10⁰
1 0^-1
FWD
IGBT
1 0^-2
1 0^-4
1 0^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]