1MBC15-060 Datasheet, PDF (4/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V_GE< 15V, T_j<125°C, R _G>16Ω
35
30
25
20
15
10
5
0
0 100 200 300 400 500 600 700
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
60
50
T_j=125°C 25°C
40
30
20
10
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Forward Voltage : V_F [V]
Typical Short Circuit Capability
250
V _CC= 4 0 0 V , R _G= 1 6Ω , T_j=125°C
100
200
t_SC
150
80
I_SC
60
100
40
50
20
0
0
5
10
15
20
25
Gate Voltage : V_GE [V]
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=15A, T _j=125°C
200
20
150
100
15
I_rr
10
50
5
t_rr
0
0
0
100 200 300 400 500 600
-di_{/dt [A/µsec]}
Transient Thermal Resistance
10¹
10⁰
1 0^-1
IGBT
1 0^-2
1 0^-4
1 0 ^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]
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