1MB20D-060 Datasheet, PDF (4/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V_GE< 15V, T_j<125°C, R _G>12Ω
50
40
30
20
10
0
0 100 200 300 400 500 600 700
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
60
T_j=125°C, 25°C
50
40
30
20
10
0
0
1
2
3
4
5
Forward Voltage : V_F [V]
300
250
200
150
100
50
0
5
Typical Short Circuit Capability
V _CC= 4 0 0 V , R _G= 1 2Ω , T_j=125°C
60
I_SC
50
t_SC
40
30
20
10
0
10
15
20
25
Gate Voltage : V_GE [V]
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=20A, T _j=125°C
350
14
300
I _rr
12
250
10
200
8
150
6
100
50
4
t _rr
2
0
0
0
100 200 300 400 500 600
-di_{/dt [A/µsec]}
10¹
10⁰
1 0^-1
1 0^-2
1 0^-4
Transient Thermal Resistance
FWD
IGBT
1 0 ^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]