1MB05-120 Datasheet, PDF (4/4 Pages) Fuji Electric – Fuji Discrete Package IGBT

Reverse Biased Safe Operating Area
+ V _GE=15V, -V _GE<15V, T_j< 125°C, R_G> 33Ω
12
10
8
6
4
2
0
0 200 400 600 800 1000 1200 1400
Collector-Emitter Voltage : V_CE [V]
Forward Voltage vs. Forward Current
6
T _j=125°C 25°C
5
4
3
2
1
0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
Forward Voltage : V_F [V]
120
100
80
60
40
20
0
5
Typical Short Circuit Capability
V _CC= 8 0 0 V , R _G= 3 3Ω , T_j=125°C
t_SC
I_SC
10
15
20
Gate Voltage : V_GE [V]
60
50
40
30
20
10
0
25
Reverse Recovery Characteristics vs. ^-di/_dt
I_F=5A, T_j=125°C
200
20
150
100
15
I _rr
10
50
5
t _rr
0
0
0
100 200 300 400 500 600
-di_{/dt [A/µsec]}
Transient Thermal Resistance
10¹
10⁰
1 0^-1
IGBT
1 0^-2
1 0^-4
1 0^-3
1 0 ^-2
1 0^-1
10⁰
Pulse Width : P_W [sec]
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