YG869C15R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG869C15R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
VF Forward Voltage (V)
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
Tj=150°C
Tj=125°C
10¹
Tj=100°C
10⁰
10^-1
Tj=25°C
10^-2
10^-3
10^-4
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
30
360°
28
26
I₀
24
λ
22
20 _{Square wave λ=60°}
18 ^{Square wave λ=120°}
Sine wave λ=180°
16
Square wave λ=180°
14
DC
12
10
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14 16 18 20 22
Io Average Output Current (A)
Reverse Power Dissipation (max.)
12
360°
DC
VR
10
α
8
6
α=180°
4
2
0
0
20
40
60
80 100 120 140 160
VR Reverse Voltage (V)
3