YG869C12R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG869C12R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150°C
10⁴
Tj=125°C
Tj=100°C
10³
10²
Tj= 25°C
10¹
10⁰
10^-1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
30
28
360°
26
I₀
24
λ
22
20
Square wave λ=60°
18
Square wave λ=120°
16 Sine wave λ=180°
Square wave λ=180°
14
DC
12
10
8
6
4
2
Per 1 element
0
0
2
4
6
8 10 12 14 16 18 20 22
Io Average Output Current (A)
Reverse Power Dissipation (max.)
8
360°
DC
7
VR
α
6
5
4
α=180°C
3
2
1
0
0
20
40
60
80
100
120
140
VR Reverse Voltage (V)
3