YG869C08R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG869C08R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF Forward Voltage (V)
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁶
Tj=150°C
10⁵
Tj=125°C
10⁴
Tj=100°C
10³
10²
Tj= 25°C
10¹
10⁰
10^-1
0
10
20
30
40
50
60
70
80
90
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
26
360°
24
22
I₀
λ
20
18
Square wave λ=60°
16
Square wave λ=120°
14
Sine wave λ=180°
Square wave λ=180°
12
DC
10
8
6
4
2
Per 1 element
0
0
2
4
6
8 10 12 14 16 18 20 22
Io Average Output Current (A)
Reverse Power Dissipation (max.)
6
DC
360°
VR
5
α
4
3
α=180°C
2
1
0
0
20
40
60
80
100
VR Reverse Voltage (V)
3