YG869C04R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG869C04R
Forward Characteristic (typ.)
10
Tj=150℃
Tj=125℃
Tj=100℃
1
Tj=25℃
0.1
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
26
24
360°
22
I₀
λ
20
18
16
Square wave λ=60°
14
Square wave λ=120°
Sine wave λ=180°
12
Square wave λ=180°
10
DC
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14 16 18 20 22
Ｉｏ Average Output Current （Ａ）
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150℃
10⁴
Tj=125℃
10³
Tj=100℃
10²
10¹
Tj= 25℃
10⁰
10^-1
10
20
30
40
ＶR Reverse Voltage （Ｖ）
Reverse Power Dissipation (max.)
1.5
360°
VR
DC
α
1.0
α=180°
0.5
0.0
0
5
10 15 20 25 30 35 40 45
ＶＲ Reverse Voltage （Ｖ）
3