YG868C08R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG868C08R
Forward Characteristic (typ.)
10
Tj=150℃
1
Tj=125℃
Tj=100℃
Tj=25℃
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ＶＦ Forward Voltage （Ｖ）
FUJI Diode
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Reverse Characteristic (typ.)
10⁵
Tj=150℃
10⁴
Tj=125℃
Tj=100℃
10³
10²
Tj= 25℃
10¹
10⁰
10^-1
0
10 20 30 40 50 60 70 80 90
ＶR Reverse Voltage （Ｖ）
Forward Power Dissipation (max.)
22
360°
20
I₀
18
λ
16
14
Square wave λ=60°
Square wave λ=120°
12
Sine wave λ=180°
Square wave λ=180°
10
DC
8
6
4
2
Per 1element
0
0
2
4
6
8
10 12 14 16 18
Ｉｏ Average Output Current （Ａ）
Reverse Power Dissipation (max.)
12
360°
DC
11
VR
10
α
9
8
7
6
α=180°
5
4
3
2
1
0
0
10 20 30 40 50 60 70 80 90
ＶＲ Reverse Voltage （Ｖ）
3