YG852C15R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YG852C15R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
1
Tj=100°C
Tj=25°C
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF Forward Voltage (V)
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150°C
10⁴
Tj=125°C
10³
Tj=100°C
10²
10¹
Tj=25°C
10⁰
10^-1
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
7
360°
6
I₀
λ
5
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
4
Square wave λ=180°
DC
3
2
1
Per 1element
0
0
2
4
6
IO Average Output Current (A)
Reverse Power Dissipation (max.)
5
360°
VR
4
α
DC
3
α=180°
2
1
0
0
20
40
60
80
100 120 140 160
VR Reverse Voltage (V)
3