YA869C10R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA869C10R
Forward Characteristic (typ.)
10
Tj=150℃
Tj=125℃
Tj=100℃
1
Tj=25℃
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ＶＦ Forward Voltage （Ｖ）
FUJI Diode
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Reverse Characteristic (typ.)
10⁵
Tj=150℃
10⁴
Tj=125℃
10³
Tj=100℃
10²
10¹
Tj= 25℃
10⁰
10^-1
0
10 20 30 40 50 60 70 80 90 100 110
ＶR Reverse Voltage （Ｖ）
Forward Power Dissipation (max.)
26
360°
24
22
I₀
λ
20
18
Square wave λ=60°
16
Square wave λ=120°
14
Sine wave λ=180°
Square wave λ=180°
12
DC
10
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14 16 18 20 22
Ｉｏ Average Output Current （Ａ）
Reverse Power Dissipation (max.)
9
360°
DC
8
VR
α
7
6
5
α=180°
4
3
2
1
0
0
20
40
60
80
100
120
ＶＲ Reverse Voltage （Ｖ）
3