YA869C04R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA869C04R
Forward Characteristic (typ.)
10⁵
10⁴
10
Tj=150℃
10³
Tj=125℃
Tj=100℃
1
Tj=25℃
10²
FUJI Diode
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Reverse Characteristic (typ.)
Tj=150℃
Tj=125℃
Tj=100℃
10¹
Tj= 25℃
0.1
10⁰
0.01
10^-1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
ＶＦ Forward Voltage （Ｖ）
20
30
40
ＶR Reverse Voltage （Ｖ）
Forward Power Dissipation (max.)
26
1.5
24
22
20
360°
18
I₀
1.0
λ
16
Square wave λ=60°
14
Square wave λ=120°
12
Sine wave λ=180°
Square wave λ=180°
10
DC
0.5
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14 16 18 20 22
Ｉｏ Average Output Current （Ａ）
0.0
0
Reverse Power Dissipation (max.)
DC
360°
VR
α
α=180°
5
10 15 20 25 30 35 40 45
ＶＲ Reverse Voltage （Ｖ）
3