YA865C08R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA865C08R
Forward Characteristic (typ.)
10
Tj=150℃
1
Tj=125℃
Tj=100℃
Tj=25℃
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
12
360°
10
I₀
λ
8
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
6 Square wave λ=180°
DC
4
2
Per 1element
0
0
2
4
6
8
10
12
Ｉｏ Average Forward Current （Ａ）
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150°C
Tj=125°C
10⁴
Tj=100°C
10³
10²
Tj=25°C
10¹
10⁰
10^-1
0
10
20
30
40
50
60
70
80
90
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
8
360°
DC
7
VR
α
6
5
4
α=180°
3
2
1
0
0
20
40
60
80
VR Reverse Voltage (V)
3