|
YA862C08R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode | |||
|
◁ |
YA862C08R
Forward Characteristic (typ.)
10
Tj=150â
1
Tj=125â
Tj=100â
Tj=25â
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage ï¼ï¼¶ï¼
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
105
Tj=150â
104
Tj=125â
Tj=100â
103
102
Tj= 25â
101
100
10-1
0
10 20 30 40 50 60 70 80 90
VR Reverse Voltage ï¼ï¼¶ï¼
Forward Power Dissipation (max.)
7
360°
6
I0
λ
5
Square wave λ=60°
4 Square wave λ=120°
Sine wave λ=180°
Square wave λ=180°
DC
3
2
1
Per 1element
0
0
1
2
3
4
5
6
ï¼©ï½ Average Forward Current ï¼ï¼¡ï¼
Reverse Power Dissipation (max.)
4
DC
360°
VR
α
3
α=180°
2
1
0
0
10 20 30 40 50 60 70 80 90
VR Reverse Voltage ï¼ï¼¶ï¼
3
|
▷ |