YA858C15R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA858C15R
Forward Characteristic (typ.)
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VF Forward Voltage (V)
FUJI Diode
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Reverse Characteristic (typ.)
10⁵
Tj=150°C
10⁴
Tj=125°C
Tj=100°C
10³
10²
Tj=25°C
10¹
10⁰
10^-1
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
24
22
360°
20
I₀
λ
18
16 _{Square wave λ=60°}
Square wave λ=120°
14
Sine wave λ=180°
12 _{Square wave λ=180°}
DC
10
8
6
4
2
Per 1element
0
0
2
4
6
8
10 12 14 16 18
Io Average Output Current (A)
Reverse Power Dissipation (max.)
12
360°
DC
VR
10
α
8
6
α=180°
4
2
0
0
20
40
60
80 100 120 140 160
VR Reverse Voltage (V)
3