YA858C12R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA858C12R
Forward Characteristic (typ.)
10
Tj=150℃
Tj=125℃
Tj=100℃
1
Tj=25℃
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
22
360°
20
I₀
18
λ
16
14 Square wave λ=60°
Square wave λ=120°
12
Sine wave λ=180°
Square wave λ=180°
10
DC
8
6
4
2
Per 1element
0
0
2
4
6
8
10
12
14
16
Ｉｏ Average Output Current （Ａ）
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10⁵
Tj=150℃
10⁴
Tj=125℃
Tj=100℃
10³
10²
Tj= 25℃
10¹
10⁰
10^-1
0
10 20 30 40 50 60 70 80 90 100 110 120 130
ＶR Reverse Voltage （Ｖ）
Reverse Power Dissipation (max.)
5
360°
DC
VR
4
α
3
α=180°
2
1
0
0
20
40
60
80
100
120
140
ＶＲ Reverse Voltage （Ｖ）
3