YA852C12R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

YA852C12R
Forward Characteristic (typ.)
10
Tj=150℃
Tj=125℃
Tj=100℃
Tj=25℃
1
FUJI Diode
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Reverse Characteristic (typ.)
10⁴
Tj=150℃
10³
Tj=125℃
Tj=100℃
10²
10¹
Tj= 25℃
10⁰
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
8
360°
I₀
λ
6
Square wave λ=60°
Square wave λ=120°
Sine wave λ=180°
4
Square wave λ=180°
DC
2
10^-1
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
ＶR Reverse Voltage （Ｖ）
Reverse Power Dissipation (max.)
2.0
360°
VR
DC
α
1.5
1.0
α=180°
0.5
Per 1element
0
0
2
4
6
Ｉｏ Average Output Current （Ａ）
0.0
0
20
40
60
80
100
120
140
ＶＲ Reverse Voltage （Ｖ）
3