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FMV13N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV13N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
max.
0.6
typ.
0.4
0.2
0.0
-50 -25
0
25 50 75 100 125 150
Tch [ °C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=13A,Tch=25 °C
14
12
Vcc= 120V
300V
480V
10
8
6
4
2
0
0
20
40
60
80
100
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100
10
1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
min.
2
1
0
-50 -25 0
25 50 75
Tch [ °C]
100 125 150
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
Ciss
103
102
Coss
101
Crss
100
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
103
td(off)
102
tf
td(on)
101
tr
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
100
10-1
100
101
102
ID [A]
3
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