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FMV06N60ES Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMV06N60ES
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
3.5
3.0
2.5
2.0
1.5
max.
1.0
typ.
0.5
0.0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=6A,Tch=25 °C
14
12
Vcc= 120V
300V
10
480V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50 55 60
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
8
7
6
5
4
max.
typ.
3
min.
2
1
0
-50 -25 0
25 50 75
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
100 125 150
103
Ciss
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=27Ω
103
10
102
td(off)
tf
td(on)
1
101
tr
0.1
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
3
100
10-1
100
101
ID [A]
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