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FMH19N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFETFeatures
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FMH19N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
1.0
0.8
0.6
max.
0.4
typ.
0.2
0.0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=19A,Tch=25 °C
14
12
Vcc= 120V
300V
10
480V
8
6
4
2
0
0
20
40
60
80 100 120 140
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25°C
100
10
1
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
min.
2
1
0
-50 -25 0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
Ciss
103
102
Coss
101
Crss
100
10-1
100
101
102
103
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=8.2Ω
103
td(off)
tf
102
td(on)
101
tr
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
3
100
10-1
100
101
ID [A]
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