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FMC11N60E Datasheet, PDF (3/5 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET
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FMC11N60E
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
2.5
2.0
1.5
max.
1.0
typ.
0.5
0.0
-50 -25 0
25 50 75
Tch [° C]
100 125 150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=11A,Tch=25 °C
20
18
16
14
Vcc= 120V
12
300V
480V
10
8
6
4
2
0
0
10 20 30 40 50 60 70 80
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 µs pulse test,Tch=25 °C
100
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
6
5
4
max.
3
typ.
2
min.
1
0
-50 -25
0
25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
104
Ciss
103
102
Coss
101
Crss
100
10-2
10-1
100
101
102
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=15 Ω
103
10
td(off)
102
tf
1
td(on)
101
tr
0.1
0.01
100
0.00
0.25
0.50
0.75
1.00
1.25
1.50
10-1
100
101
102
VSD [V]
ID [A]
3
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