FGW40N120H Datasheet, PDF (3/6 Pages) Fuji Electric – Discrete IGBT (High-Speed V series) 1200V / 40A

FGW40N120H
Graph.7
Typical Capacitance
VGE=0V,f=1MHz,Tj=25°C
10⁴
Cies
10³
Coes
10²
Cres
10¹
10⁰
10^-2
10^-1
10⁰
10¹
VCE [V]
Graph.9
Typical switching time vs. IC
Tj=175°C,VCC=600V,L=500µH
VGE=15V,RG=10Ω
1000
td(off)
100
tf
td(on)
10
tr
1
0
10
20
30
40
50
60
70
80
Collector Current IC [A]
Graph.11
Typical switching losses vs. IC
Tj=175°C,VCC=600V,L=500µH
VGE=15V,RG=10Ω
12
10
8
Eon
6
Eoff
4
2
0
0
20
40
60
80
Collector Current IC [A]
3
Discrete IGBT
http://www.fujielectric.com/products/semiconductor/
Graph.8
Typical Gate Charge
VCC=600V,IC=40A,Tj=25°C
20
15
VCC=600V
10
5
0B
0
50
100 150 200 250 300 350 400
QG [nC]
Graph.10
Typical switching time vs. RG
Tj=175°C,VCC=600V,IC=40A,L=500µH
VGE=15V
1000
100
10
td(off)
tf
tr
td(on)
1
0
10
20
30
40
50
60
Gate Resistor RG [Ω]
Graph.12
Typical switching losses vs. RG
Tj=175°C,VCC=600V,IC=40A,L=500µH
VGE=15V
12
10
8
6
Eon
Eoff
4
2
0
0
10
20
30
40
50
60
Gate Resistor RG [Ω]