ERC80-004R Datasheet, PDF (3/6 Pages) Fuji Electric – Schottky Barrier Diode

ERC80-004R
Forward Characteristic (typ.)
100
10
Tj=150℃
Tj=125℃
Tj=100℃
Tj=25℃
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ＶＦ Forward Voltage （Ｖ）
Forward Power Dissipation (max.)
7.0
6.5
360°
6.0
I₀
5.5
λ
5.0
4.5
4.0
Square wave λ=60°
Square wave λ=120°
3.5
Sine wave λ=180°
3.0
Square wave λ=180°
DC
2.5
2.0
1.5
1.0
0.5
Per 1element
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
ＩF(AV) Average Forward Current （Ａ）
FUJI Diode
http://www.fujisemi.com
Reverse Characteristic (typ.)
10²
Tj=150℃
Tj=125℃
10¹
Tj=100℃
10⁰
10^-1
Tj=25℃
10^-2
10^-3
0
10
20
30
40
50
ＶＲ Reverse Voltage （Ｖ）
Reverse Power Dissipation (max.)
6
360°
DC
VR
5
α
4
3
α=180°
2
1
0
0
5 10 15 20 25 30 35 40 45 50
ＶＲ Reverse Voltage （Ｖ）
3