6MBI150VX-060-50 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

6MBI150VX-060-50
Characteristics (Representative)
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25^oC / chip
300
V_GE=20V
12V
15V
200
10V
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
300
Tj=25°C
150°C
125°C
200
100
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
V_GE=0V, f= 1MHz, Tj= 25^oC
100.0
IGBT Modules
[ Inverter ]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150^oC / chip
300
V_GE=20V
15V
12V
200
10V
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
[ Inverter ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25^oC / chip
8
6
4
2
Ic=300A
Ic=150A
Ic= 75A
0
5
10
15
20
25
Gate - Emitter voltage: VGE [V]
[ Inverter ]
Dynamic gate charge (typ.)
Vcc=300V, Ic=150A, Tj= 25°C
10.0
Cies
1.0
Coes
Cres
0.1
0
10
20
30
40
Collector - Emitter voltage: VCE [V]
3
V_GE
V_CE
0
200
400
600
800 1000
Gate charge: Qg [nC]