2SK3688-01L Datasheet, PDF (3/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3688-01L,S,SJ
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250μA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10⁴
Ciss
10³
10²
Coss
10¹
10⁰
10⁰
Crss
10¹
10²
10³
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
10³
10²
td(on)
10¹
tr
td(off)
tf
10⁰
10^-1
10⁰
10¹
10²
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25 °C
14
12
Vcc= 120V
10
300V
480V
8
6
4
2
0
0
10
20
30
40
50
60
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 μs pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
700
600
I =7A
AS
500
I =10A
400 ^AS
300
I =16A
AS
200
100
0
0
25
50
75
100
125
150
starting Tch [°C]
3