2SK3518-01MR Datasheet, PDF (3/4 Pages) Fuji Electric – N-CHANNEL SILICON POWER MOSFET

2SK3518-01MR
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
max.
4.5
4.0
3.5
3.0
min.
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
10n
1n
Ciss
100p
10p
1p
10^-1
Coss
Crss
10⁰
10¹
10²
10³
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
10²
tf
td(off)
10¹
td(on)
tr
10⁰
10^-1
10⁰
10¹
10²
ID [A]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=3A, Tch=25°C
20
18
16
14
12
Vcc= 100V
250V
10
400V
8
6
4
2
0
0
5
10
15
20
25
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs Pulse test,Tch=25°C
100
10
1
0.1
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
VSD [V]
Maximum Avalanche Energy vs. starting Tch
E =f(starting Tch):Vcc=50V
AS
500
400
I =2.4A
300 ^AS
I =3.6A
AS
200
I =6A
AS
100
0
0
25
50
75
100
125
150
starting Tch [°C]
3