2MBI200HH-120-50 Datasheet, PDF (3/6 Pages) Fuji Electric – HIGH SPEED IGBT MODULE 1200V / 200A / 2 in one package

2MBI200HH-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=25ºC
10000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω,Tj=125ºC
10000
1000
100
10
0
toff
tf
100
200
300
400
Collector current : Ic [ A ]
1000
toff
100
tf
10
0
100
200
300
400
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V,Tj=25ºC
10000
1000
toff
100
tf
10
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj=125ºC
20
Eoff
10
0
0.1
1.0
10.0
Gate resistance : RG [ Ω ]
100.0
3
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω
20
15
Eoff(125ºC)
Eoff(25ºC)
10
5
0
0 50 100 150 200 250 300 350 400
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 1.6Ω, Tj <= 125ºC
500
400
300
200
100
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]