2MBI150NB-120 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE ( N series )

Switching time vs. RG
Vcc=600V, Ic=150A, VGE=±15V, Tj=25°C
toff
ton
1000
tr
tf
100
10
Gate resistance : RG [Ω ]
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
300
200
100
0
0
0,1
1
2
3
4
5
Forward voltage : VF [V]
Transient thermal resistance
Diode
IGBT
0,01
0,001
0,001
0,01
0,1
1
Pulse width : PW [sec]
1000
800
600
400
200
0
0
100
Dynamic input characteristics
Tj=25°C
25
Vcc=400V
600V
20
800V
15
10
5
500
1000
1500
Gate charge : Qg [nC]
0
2000
Reverse recovery characteristics
trr, Irr vs. IF
trr
125°C
trr
25°C
Irr
125°C
Irr
25°C
10
0
100
200
300
Forward current : IF [A]
1400
1200
1000
800
600
400
200
0
0
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>5.6Ω
SCSOA
(non-repetitive pulse)
RBSOA (Repetitive pulse)
200
400
600
800
1000 1200
Collector-Emitter voltage : VCE [V]