2MBI100HB-120-50 Datasheet, PDF (3/6 Pages) Fuji Electric – HIGH SPEED IGBT MODULE 1200V / 100A / 2 in one package

2MBI100HB-120-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
1000
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.1Ω,Tj=25ºC
100
10
0
toff
tf
100
200
300
Collector current : Ic [ A ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V,Tj=25ºC
1000
toff
100
tf
10
1
10
100
Gate resistance : RG [ Ω ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=100A, VGE=±15V,Tj=125ºC
20
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.1Ω,Tj=125ºC
1000
toff
100
tf
10
0
100
200
300
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=3.1Ω
10
Eoff(125^oC)
Eoff(25^oC)
5
0
0
50
100
150
200
250
Collector current : Ic [ A ]
Reverse bias safe operating area (max.)
+VGE=15V, -VGE <= 15V, RG >= 3.1Ω,Tj <= 125ºC
300
200
10
Eoff
100
0
1
10
100
Gate resistance : RG [ Ω ]
0
0
400
800
1200
1600
Collector-Emitter voltage : VCE [ V ]
3