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| 1MBK50D-060S Datasheet, PDF (3/5 Pages) Fuji Electric – Molded IGBT | |||
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1MBK50D-060S
Characteristics
Collector current vs. Collector-Emitter voltage
Tj=25°C
Molded IGBT
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
VCC=300V, RG=8â¦, VGE=+15V, Tj=125°C
Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
VCC=300V, RG=33â¦, VGE=±15V, Tj=125°C
Collector current : IC (A)
Collector current : IC (A)
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