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| 1MBI400NN-120 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE ( N series ) | |||
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1000
100
Switching time vs. RG
VCC=600V, IC=400A, VGE=±15V, Tj=25°C
toff
ton
tr
tf
1000
800
1
10
Gate resistance : RG [⦠]
Forward current vs. Forward voltage
VGE=OV
Tj=125°C 25°C
600
400
200
0
0
1
2
3
4
5
Forward voltage : VF [V]
Transient thermal resistance
0,1
0,01
Diode
IGBT
0,001
0,001
0,01
0,1
1
Pulse width : PW [sec]
1000
800
600
Dynamic input characteristics
Tj=25°C
25
VCC=400V
600V
20
800V
15
400
10
200
5
0
0
0
1000
2000
3000
4000
5000
Gate charge : QG [nC]
Reverse recovery characteristics
trr, Irr vs. IF
Irr 125°C
trr 125°C
Irr 25°C
trr 25°C
100
0
200
400
600
800
Forward current : IF [A]
4000
Reversed biased safe operating area
+VGE=15V, -VGE<15V, Tj<125°C, RG>1.8â¦
3000
2000
SCSOA
(non-repetitive pulse)
1000
RBSOA (Repetitive pulse)
0
0
200 400 600 800 1000 1200
Collector-Emitter voltage : V(CE) [V]
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