1MBI300NP-120 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE(N series)

1000
Switching time vs. R_G
V_CC=600V, I_C=300A, V_GE=±15V, T_j=25°C
t_off
t_on
t_r
t_f
100
1
10
Gate resistance : R_G [Ω ]
Forward current vs. Forward voltage
V_GE=OV
T_j=125°C 25°C
600
400
200
0
0
0,1
1
2
3
4
5
Forward voltage : V_F [V]
Transient thermal resistance
Diode
IGBT
0,01
0,001
0,001
0,01
0,1
1
Pulse width : PW [sec]
1000
800
600
Dynamic input characteristics
T _j= 2 5 ° C
25
V_CC=400V
600V
20
800V
15
400
10
200
5
0
0
0 500 1000 1500 2000 2500 3000 3500 4000
Gate charge : Q_G [nC]
Reverse recovery characteristics
t_rr, I_rr vs. I_F
t_rr 125°C
I_rr 125°C
I_rr 25°C
t_rr 25°C
100
0
3000
200
400
600
Forward current : I_F [A]
Reversed biased safe operating area
+V_GE=15V, -V_GE<15V, T_j<125°C, R_G>2.7Ω
2500
2000
1500
SCSOA
(non-repetitive pulse)
1000
500
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000
Collector-Emitter voltage : V_CE [V]
1200