1MBI2400U4D-170 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI2400U4D-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Rgoff=0.68Ω, Tj=125°C
2.4
2.2
ton
2.0
1.8
1.6
1.4
toff
1.2
1.0
tr
0.8
0.6
0.4
tf
0.2
0.0
0 500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=1.8Ω, Rgoff=0.68Ω, Tj=125°C
1600
1400
Eoff
1200
Eon
1000
Err
800
600
400
200
0
0 500 1000 1500 2000 2500 3000 3500 4000
Collector current : Ic [ A ] , Forward current : IF [ A ]
5500
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
0
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
500
1000
1500
Collector - Emitter voltage : VCE [ V ]
2000
3
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=2400A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
toff
3.0
tr
2.0
1.0
tf
0.0
0123456789
Gate resistance : Rg [ Ω ]
2600
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=2400A,VGE=±15V, Tj= 125°C
2400
Eon
2200
2000
1800
1600
1400
Eoff
1200
1000
800
600
Err
400
200
0
0123456789
Gate resistance : Rg [ Ω ]