1MBI200N-120 Datasheet, PDF (3/4 Pages) Fuji Electric – IGBT MODULE

1000
Switching time vs. R_G
V_CC=600V, I_C=200A, V_GE=±15V, T_j=25°C
t_off
t_on
t_r
t_f
100
10
Gate resistance : R_G [Ω ]
Forward current vs. Forward voltage
V_GE=OV
500
T_j=125°C 25°C
400
300
200
100
0
0
1
2
3
4
5
Forward voltage : V_F [V]
Transient thermal resistance
Diode
0,1
IGBT
0,01
0,001
0,001
0,01
0,1
1
Pulse width : PW [sec]
1000
800
600
400
200
0
0
Dynamic input characteristics
T_j=25°C
25
V_CC=400V
600V
20
800V
15
10
5
500
1000
1500
2000
Gate charge : Q_G [nC]
0
2500
Reverse recovery characteristics
t_rr , I_rr vs. I_F
t_rr 125°C
I_rr 125°C
t_rr 25°C
I_rr 25°C
100
0
100
200
300
400
Forward current : I_F [A]
2000
Reversed biased safe operating area
+V_GE=15V, -V_GE<15V, T_j<125°C, R_G>4.7Ω
1600
1200
800
SCSOA
(non-repetitive pulse)
400
0
0
RBSOA (Repetitive pulse)
200 400 600 800 1000
Collector-Emitter voltage : V_CE [V]
1200