1MBI1600U4C-120 Datasheet, PDF (3/6 Pages) Fuji Electric – IGBT MODULE

1MBI1600U4C-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=1.5Ω, Rgoff=0.75Ω, Tj= 125°C
1.4
1.2
ton
1.0
toff
0.8
0.6
tr
0.4
0.2
tf
0.0
0
400 800 1200 1600 2000 2400 2800
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=1.5Ω, Rgoff=0.75Ω, Tj= 125°C
500
450
Eoff
400
350
300
Eon
250
200
150
Err
100
50
0
0 400 800 1200 1600 2000 2400 2800
Collector current : Ic [ A ] , Forward current : IF [ A ]
4000
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
3200
2400
1600
800
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1600A,VGE=±15V, Tj=125°C
6.0
ton
5.0
4.0
3.0
toff
tr
2.0
1.0
0.0
0
tf
2
4
6
8
10 12 14
Gate resistance : Rg [ Ω ]
1500
1250
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1600A,VGE=±15V, Tj= 125°C
Eon
1000
750
Eoff
500
250
0
0
Err
2
4
6
8
10 12 14
Gate resistance : Rg [ Ω ]
3