1MBH50D-060 Datasheet, PDF (3/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Switching Time vs. R_G
V _CC=300V, I_C=50A, V_GE=±15V, T_j=25°C
1000
t_on
t_off
t_r
t_f
100
Switching Time vs. R_G
V _CC=300V, I _C=50A, V_GE=±15V, T_j=125°C
1000
t_off
t_f
t_on
100 ^tr
10
0
50
100
Gate Resistance : R_G [Ω]
Capacitance vs. Collector-Emitter Voltage
T _j=25°C
10
C _ies
1
C _oes
0,1
C _res
0,01
0
5
10
15
20
25
30
35
Collector-Emitter Voltage : V_CE [V]
Reverse Recovery Time vs. Forward Current
400
V _R=200V, ^-di/_dt=100A/µsec
300
125°C
200
25°C
100
0
0
20
40
60
80
100
Forward Current : I_F [A]
10
0
50
100
Gate Resistance : R_G [Ω]
500
400
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V =200V, 300V, 400V
CC
20
300
15
200
10
100
5
0
0
0
50
100 150 200 250 300
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R=200V, ^-di/_dt=100A/µsec
15
125°C
10
25°C
5
0
0
20
40
60
80
100
Forward Current : I_F [A]