1MB10D-120 Datasheet, PDF (3/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

Switching Time vs. R_G
V _CC=600V, I_C=10A, V_GE=±15V, T_j=25°C
1000
t _off
t_f
t_on
100
t_r
10
100
Gate Resistance : R_G [Ω]
Capacitance vs. Collector-Emitter Voltage
T _j= 2 5 ° C
1000
100
10
C _ies
C _oes
C _res
1
0
5
10
15
20
25
30
35
Reverse Recovery Time vs. Forward Current
200
V _R=200V, ^-di/_dt=100A/µsec
125°C
150
25°C
100
50
0
0
5
10
15
Forward Current : I_F [A]
Switching Time vs. R_G
V _CC=600V, I _C=10A, V_GE=±15V, T_j=125°C
1000
t_off
t_f
t_on
t_r
100
10
100
Gate Resistance : R_G [Ω]
1000
800
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V=
CC
400V
600V
800V
20
600
15
400
10
200
5
0
0
0 20 40 60 80 100 120 140 160 180
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R= 2 0 0 V , ^-di/_dt= 1 0 0 A / µ s e c
10
125°C
8
6
25°C
4
2
0
0
5
10
15
Forward Current : I_F [A]