1MB03D-120 Datasheet, PDF (3/5 Pages) Fuji Electric – Fuji Discrete Package IGBT

1000
Switching Time vs. R_G
V _CC=600V, I _C=2.5A, V _GE=±15V, T_j=25°C
t_on
t_off
t_f
100
t_r
10
100
Gate Resistance : R_G [Ω]
Capacitance vs. Collector-Emitter Voltage
T _j= 2 5 ° C
1000
100
10
C _ies
C _oes
C _res
1
0
5
10
15
20
25
30
35
Reverse Recovery Time vs. Forward Current
150
V _R=200V, ^-di/_dt=100A/µsec
125°C
100
25°C
50
Switching Time vs. R_G
V _CC=600V, I _C=2.5A, V_GE=±15V, T_j=125°C
1 0 0 0 _toff
t_f
t_on
t_r
100
100
Gate Resistance : R_G [Ω]
1000
800
600
400
200
0
0
Dynamic Input Characteristics
T _j= 2 5 ° C
25
V=
CC
400V
600V
20
800V
15
10
5
0
20
40
60
80
Gate Charge : Q_G [nQ]
Reverse Recovery Current vs. Forward Current
V _R=200V, ^-di/_dt=100A/µsec
6
125°C
4
25°C
2
0
0
1
2
3
4
5
Forward Current : I_F [A]
0
0
1
2
3
4
5
Forward Current : I_F [A]