YG868C10R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(100V / 30A )
Characteristics
Forward Characteristic (typ.)
10
1
Tj=150^oC
Tj=125^oC
Tj=100^oC
Tj=25^oC
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF Forward Voltage (V)
Forward Power Dissipation (max.)
24
22
20
11112222^Io33334444555566667777888899990000111122223333444455556666
λ
18
360 º
16
Square wave λ=60^o
14 Square wave λ=120^o
Sine wave λ=180^o
12 _{Square wave λ=180}
DC
10
8
6
4
2
Per 1element
0
0 2 4 6 8 10 12 14 16 18
Io Average Output Current (A)
YG868C10R (30A)
Reverse Characteristic (typ.)
10²
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
0 10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Reverse Power Dissipation (max.)
13
12
360 º
DC
11
10
VR
1111111222222233333334444444
1111111222222233333334444444
9
α
8
7
6
α=180^o
5
4
3
2
1
0
0 10 20 30 40 50 60 70 80 90 100 110 120
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
110
100
90
80
360 º
70
λ
60
50 ^{11112222333344445555666677778888Io9999000011112222333344445555}
40
VR=50V
DC
Sine wave λ=180^o
Square wave λ=180^o
Square wave λ=120^o
Square wave λ=60^o
30
0
5 10 15 20 25 30 35 40 45
Io Average Output Current (A)
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)