YG868C06R Datasheet, PDF (2/3 Pages) Fuji Electric – Low IR Schottky barrier diode

(60V / 30A )
Characteristics
Forward Characteristic (typ.)
10
Tj=150^oC
1
Tj=125^oC
Tj=100^oC
Tj=25^oC
0.1
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF Forward Voltage (V)
YG868C06R (30A)
Reverse Characteristic (typ.)
Tj=150^oC
10¹
Tj=125^oC
Tj=100^oC
10⁰
10^-1
Tj= 25^oC
10^-2
10^-3
0
10 20 30 40 50 60 70 80
VR Reverse Voltage (V)
Forward Power Dissipation (max.)
24
22
20
1111^I2222^o3333444455556666777788889999000011112222333344445555
λ
18
360 º
16
14 ^{Square wave λ=60o}
Square wave λ=120^o
12 _{Sine wave λ=180}^o
Square wave λ=180^o
10
DC
8
6
4
2
0
Per 1element
-2
-2 0 2 4 6 8 10 12 14 16 18
Io Average Forward Current (A)
Reverse Power Dissipation (max.)
7
360 º
DC
6
5
VR
11111111222222223333333344444444
11111111222222223333333344444444
α
4
α=180^o
3
2
1
0
0
10 20 30 40 50 60 70 80
VR Reverse Voltage (V)
Current Derating (Io-Tc) (max.)
150
140
130
120
110
DC
100
90
360 º
80
λ
70
60
111222333444555666777888^Io999000111222333444555666
VR=30V
Square wave λ=180^o
Sine wave λ=180^o
Square wave λ=120^o
Square wave λ=60^o
50
0 5 10 15 20 25 30 35 40 45
Io Average Output Current (A)
α:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (max.)
1000
100
10
1
10
100
1000
VR Reverse Voltage (V)